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Silicon Carbide High Temperature Oxidation Furnace
keyword:
Silicon Carbide High Temperature Oxidation Furnace
Silicon Carbide High Temperature Furnace
Silicon Carbide High Temperature Oxidation Furnace
Product Description:
Application: This is a specialised equipment for the high temperature oxidation process of Silicon Carbide (SiC) discs. This equipment is capable of oxidising SiC materials at high temperatures to meet specific process requirements. In addition to the high temperature oxidation of SiC wafers, the machine can also be used for the oxidation of conventional silicon wafers.
Features:
• Maximum working temperature is up to 2000°C
• The temperature rise rate can reach 100°C/minute
• With a high degree of automation, it supports the automatic loading function and realises the Cassette to Cassette operation mode, which improves productivity and ease of operation.
• In terms of processing capacity, the silicon carbide high temperature oxidation furnace supports batch processing wafer sizes of 2 inches, 3 inches, 4 inches and 6 inches.
• The specific batch quantity is: 40 pieces of 2-inch wafers or 50 pieces of 6-inch wafers, to meet the needs of different scale of production.
• The vacuum level of the equipment is less than 10^-3 mbar, which ensures the high vacuum environment required during the high temperature oxidation process and contributes to the improvement of process quality and product performance.
Product Specifications:
Product Model Specification | ZY-CHL-400 | ZY-CHL-600 | ZY-CHL-800 | ZY-CHL-1050 | ZY-CHL-1500 | |
Size and Volume (mm) | 400×400×800 128L | 600×600×1800 648L | 800×800×2000 1280L | 1050×1050×2900 3200L | 1500×1500×6000 13500L | |
Rated Temperature (°C) | 2000 | 2000 | 2000 | 2000 | 2000 | |
Limiting Temperature (°C) | 2200 | 2200 | 2200 | 2200 | 2200 | |
Configuration Power (KW) | 150 | 350 | 450 | 800 | 2000 | |
Temperature Difference in High Temperature Zone (℃) | ±5 | ±8 | ±10 | ±15 | ±15 | |
Temperature Control Method | PID segmented programme control and manual control (Japanese conductive instruments) | |||||
Heating Method | Graphite, tungsten, molybdenum, etc. resistance heating | |||||
Operating Atmosphere | Vacuum, nitrogen, argon, hydrogen, etc. | |||||
Ultimate Vacuum (pa) | 5 (empty furnace, cooling) (or customised according to customer requirements) |
Product Showcase:
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