Silicon Carbide Hot Pressing Process and Application Areas
Release time:
2025-05-05
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Abstract
This article describes the principles and application areas of the silicon carbide vacuum hot pressing process.
Silicon carbide (SiC) is a high-performance ceramic material with excellent properties such as high strength, high hardness, high temperature resistance, corrosion resistance, and oxidation resistance, and is widely used in aerospace, nuclear energy, semiconductor, and machinery manufacturing.
1. Silicon Carbide Vacuum Hot Pressing Principle
- Vacuum environment: The cranial cavity is vacuumed during the sintering process to avoid oxidation and to ensure the purity and properties of the material.
- High temperature and pressure: High temperatures and pressures are applied to the silicon carbide powder in a vacuum environment. The high temperature increases the vapour pressure of the silicon carbide particles, increases the diffusion coefficient and decreases the viscosity, thus promoting particle rearrangement and plastic flow processes. The high pressure accelerates the material transfer between particles and promotes densification.
- Clustering mechanism: Under high temperature and pressure, the plastic deformation of silicon carbide particles occurs, and the contact area between particles increases, which promotes the diffusion of substances and migration of grain boundaries, eliminates the residual closed pores, and improves the density and hardness of the material.
- Process control: Precise control of sintering temperature, pressure and time is key. Excessive temperatures can lead to overgrowth of the grains and reduce the strength of the material. Too low a pressure may result in insufficient densification.
2. Areas of Application
- Aerospace: High temperature resistant parts,such as turbine blades
- Semiconductor industry: Crucible for SiC single crystal growth, epitaxial substrates
- Nuclear industry: Nuclear fuel cladding, neutron absorbing materials
- Opto-electronics: Optical Mirror Substrates
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