The Operating Principle of PI Film graphitising furance
Release time:
2025-06-23
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Abstract
PI film (polyimide film) graphitising furnace is a special equipment for converting PI film into graphitised material under high temperature environment, its working principle is based on high temperature heat treatment and carbon atom rearrangement process. The following is a detailed description of its core working principle and steps:
1. Basic principle
PI film graphitising is the pyrolysis of the organic components (carbon, hydrogen, oxygen, nitrogen, etc.) in the PI film by high temperature (usually above 2000°C) under the protection of inert gases (e.g. nitrogen, argon), which ultimately results in the formation of a carbon material dominated by a graphite crystal structure. This process is divided into two key stages:
Carbonisation stage (300-1000°C): non-carbon elements (H, O, N, etc.) in the PI film escape as gases, leaving a carbon skeleton.
Graphitising stage (>2000°C): the carbon atoms rearrange themselves at high temperatures to form an ordered graphite layered structure (sp² hybridisation).
2. Equipment Components
Graphitising furnaces typically contain the following key components:
Heating system: Graphite heaters (e.g. graphite resistance heaters) or induction heating are used to provide an ultra-high temperature environment.
Inert gas protection system: Nitrogen or argon gas is introduced to prevent material oxidation at high temperatures.
Temperature control system: precisely control the rate of heating, holding time and cooling process.
Sealed chamber: ensures atmosphere stability and safety during high-temperature processing.
3. Workflow
Charging: Place the PI film rolls or sheets in the furnace to ensure even heating.
Carbonisation:
Slowly increase the temperature to 300-800°C to remove volatile components (e.g. moisture, small molecule gases) from the PI film.
Continue to raise the temperature to 1000-1500°C to complete carbonisation and form an amorphous carbon structure.
High temperature graphitising:
Increase the temperature to 2000-3000°C (on request), the carbon atoms are rearranged by thermal vibration to form graphite microcrystals.
Holding for a certain period of time (several hours) to promote crystal growth.
Cooling: slow cooling in an inert atmosphere to avoid thermal stresses that can cause cracking of the material.
Take-off: obtain graphitised PI film (significant increase in thermal and electrical conductivity).
4. Key process parameters
Temperature: the degree of graphitisation is directly dependent on the maximum temperature (the higher the temperature, the more complete the graphitisation).
Temperature rise rate: too fast a rate can cause cracking of the PI film, usually requiring temperature control in stages.
Atmosphere purity: the oxygen content needs to be extremely low (<1ppm), otherwise the material will be oxidised and ablated.
Pressure: Some processes use pressurised graphitising to increase density.
5. Application and output characteristics
The graphitised PI film has the following properties:
High thermal conductivity (up to 1000 W/m-K or more).
High electrical conductivity (close to graphene or metal level).
High temperature and corrosion resistance.
Uses: lithium battery anode materials, flexible electronic devices, aerospace thermal management materials, etc.
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Zhuzhou Chi Carbon Automation Equipment Co., Ltd
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